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Data Sheet No. PD60311
IRS21091(S)PbF
Features
? Floating channel designed for bootstrap operation
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt
immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels
? 3.3 V, 5 V, and 15 V input logic compatible
? Cross-conduction prevention logic
? Matched propagation delay for both channels
? High-side output in phase with IN input
? Logic and power ground +/- 5 V offset
? Internal 500 ns deadtime, and programmable
up to 5 μ s with one external R DT resistor
? Lower di/dt gate driver for better noise immunity
? The dual function DT/SD input turns off both
channels
? RoHS compliant
HALF-BRIDGE DRIVER
Product Summary
V OFFSET 600 V max.
I O +/- 120 mA / 250 mA
V OUT 10 V - 20 V
t on/off (typ.) 750 ns & 200 ns
Deadtime 540 ns
Packages
ruggedized monolithic construction. The logic input is 8 Lead PDIP
compatible with standard CMOS or LSTTL output,
Description
The IRS21091 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high- and
low-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
8 Lead SOIC
IRS21091S IRS21091
down to 3.3 V logic. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high-side configuration which operates up to 600 V.
Typical Connection
V CC
V CC
V B
up to 600 V
IN
IN
HO
DT/SD
DT/SD
COM
V S
LO
TO
LOAD
(Refer to Lead Assignments for
correct configuration). These dia-
grams show electrical connec-
tions only. Please refer to our
Application Notes and DesignTips
for proper circuit board layout.
www.irf.com
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